The first version of 3D X-DRAM storage achieves 128 Gb at 230 layers per chip, 8x higher density than current 2D DRAM chips.

Neo Semiconductor believes that the solution can be scaled more easily and at a lower implementation cost than other 3D DRAM alternatives, making it a solid candidate to replace 2D DRAM in the near future.

At the heart of 3D X-DRAM technology is the innovative use of floating body cells (FBCs), which use today’s mature 3D NAND process to define bitline vias and form cell structures within the vias using only a mask. This approach can greatly simplify the production, implementation and transition of 2D DRAM.

According to Neo Semiconductor’s estimates, storage capacity could double to 256 Gb by 2025, while 1 Tb of capacity could be available within a decade. More information will be available at the Flash Memory Summit on August 9, 2023.

The official introduction of 3D X-DRAM for those interested in reading it.

The post 3D-like NAND design, Neo Semiconductor introduces 3D X-DRAM: 8x density, 230 layers appeared first on TechGoing.

According to Alper Ilkbahar, senior vice president of technology and strategy at Western Digital, the companies’ collaboration and R&D investment enabled them to advance the productization of this fundamental technology and deliver a high-performance and capital-efficient solution. By introducing several unique processes and architectures,

One of the breakthrough innovations introduced by the two companies is CMOS direct bond-to-array (CBA) technology. Each CMOS wafer and cell array wafer is manufactured separately in its optimal state and then bonded together to provide higher bit density and faster NAND I/O speeds.

Its NAND I/O speed of more than 3.2Gb/s, a 60% improvement over the previous generation, along with a 20% improvement in write performance and a 20% reduction in read latency, will deliver a faster and more convenient user experience.

This advanced engineering partnership has led to the successful launch of the 8th generation BiCS FLASH, which has the industry’s highest bit density. Samples are now available to select customers for future use in a range of data-centric applications, including smartphones, IoT devices and data centres.

The post Kioxia and Western Digital Announce 218-Layer 3D NAND Flash appeared first on TechGoing.

From the Korean media reports, Samsung Electronics at least 4 potential suppliers with contact, all Japanese manufacturers, including the world’s largest photoresist supplier Tokyo should be chemical industry, but sources revealed that they have not met the requirements of Samsung Electronics.

In the report, the foreign media mentioned that Samsung Electronics has repeatedly contacted Japanese photoresist suppliers to find new suppliers, but they have not been able to meet the requirements in terms of thickness.

As a key material for the production of advanced 3D NAND flash memory, Samsung Electronics has been supplied by South Korea’s own Dongjin Shimeiken, in 2013 before they began producing 3D NAND flash memory, Samsung Electronics has worked with this company to develop photoresists.

Tokyo Chemical Industry and other manufacturers can not request, which means that Samsung Electronics in the future in the production of 3D NAND flash, will still use the photoresist of Dongjin Shimaken, has been the exclusive supply of nearly 10 years Dongjin Shimaken, the next period of time will remain the exclusive supplier.

The post Samsung has abandoned plans to diversify its 3D NAND flash photoresist suppliers appeared first on TechGoing.