Neo Semiconductor, a U.S.-based 3D NAND flash memory maker, recently launched its 3D X-DRAM memory chip, claiming to be the world’s first DRAM with a 3D NAND-like design that significantly exceeds the capacity of current 2D DRAM solutions.
The first version of 3D X-DRAM storage achieves 128 Gb at 230 layers per chip, 8x higher density than current 2D DRAM chips.
Neo Semiconductor believes that the solution can be scaled more easily and at a lower implementation cost than other 3D DRAM alternatives, making it a solid candidate to replace 2D DRAM in the near future.
At the heart of 3D X-DRAM technology is the innovative use of floating body cells (FBCs), which use today’s mature 3D NAND process to define bitline vias and form cell structures within the vias using only a mask. This approach can greatly simplify the production, implementation and transition of 2D DRAM.
According to Neo Semiconductor’s estimates, storage capacity could double to 256 Gb by 2025, while 1 Tb of capacity could be available within a decade. More information will be available at the Flash Memory Summit on August 9, 2023.
The official introduction of 3D X-DRAM for those interested in reading it.
