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Kioxia and Western Digital Announce 218-Layer 3D NAND Flash

Kioxia and Western Digital recently announced their latest 3D flash memory technology, which offers ultra-high capacity, performance and reliability at an affordable price. The technology uses the results of advanced scaling and wafer bonding technology and is designed to meet the needs of the fast-growing data market in a variety of industries.

According to Alper Ilkbahar, senior vice president of technology and strategy at Western Digital, the companies’ collaboration and R&D investment enabled them to advance the productization of this fundamental technology and deliver a high-performance and capital-efficient solution. By introducing several unique processes and architectures,

Kioxia and Western Digital have lowered costs, achieved continued advances in lateral scaling, and increased the capacity of a single chip with fewer layers and at a more optimized cost.

One of the breakthrough innovations introduced by the two companies is CMOS direct bond-to-array (CBA) technology. Each CMOS wafer and cell array wafer is manufactured separately in its optimal state and then bonded together to provide higher bit density and faster NAND I/O speeds.

Its NAND I/O speed of more than 3.2Gb/s, a 60% improvement over the previous generation, along with a 20% improvement in write performance and a 20% reduction in read latency, will deliver a faster and more convenient user experience.

This advanced engineering partnership has led to the successful launch of the 8th generation BiCS FLASH, which has the industry’s highest bit density. Samples are now available to select customers for future use in a range of data-centric applications, including smartphones, IoT devices and data centres.

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