August 16 news, according to foreign media THELEC reported today, semiconductor industry sources revealed that SK Hynix plans to mass production of the latest UFS 4.0 flash memory with 238 layers of NAND (V8) as early as the first half of next year.
According to SK Hynix’s UFS 4.0 memory development plan, SK Hynix will primarily equip UFS 4.0 flash with V7 and V8 NAND, of which V8 is the world’s first 238-layer NAND flash developed by SK Hynix, consuming 21% less energy than 176-layer NAND (V7). The V8 is the world’s first 238-layer NAND flash memory developed by SK Hynix and consumes 21% less energy than the 176-layer NAND (V7).
THELEC also revealed the data processing speed of the UFS 4.0 flash being developed by SK Hynix: 4000 MB/s sequential read and 2800 MB/s sequential write, with a form factor of 11 x 13 x 0.8mm. Judging from the speed alone, the speed now revealed may only be equipped with V7 NAND.
For comparison, Samsung’s UFS 4.0, which debuted on May 4, uses 176 layers of NAND (V7), with 4200 MB/s sequential reads and 2800 MB/s sequential writes in an 11×13×1mm form factor.
Previously, it was announced that SK Hynix 238-layer NAND flash memory has a data transfer speed of 2.4Gbps, a 50% increase over the previous generation, which is not yet used in UFS 4.0.
SK Hynix developed 238-layer 512GB TLC 4D NAND flash memory
According to THELEC, SK Hynix has already supplied 238-layer NAND samples to major customer companies and plans to mass produce them in the first half of next year, so UFS 4.0 memory with V8 NAND is also expected to be mass produced from the first half of next year at the earliest.
UFS 4.0 flash memory, the latest standard officially approved in May this year, has a data transfer bandwidth of 23.2 Gbps, twice that of the previous UFS 3.1, and the greater the bandwidth, the faster the data processing speed.
