After Samsung announced the development of 16Gb DDR5 DRAM in December last year, it announced today that it has mass-produced 12nm DDR5 DRAM.
The memory chip industry is currently in a downturn, and Samsung hopes to further consolidate its leading position in this field by mass-producing 12nm DRAM.
It is learned from a Samsung press release that compared with the previous generation, the power consumption of the new chip has been reduced by 23%, while the wafer productivity has increased by 20%, which means that the chip size is smaller than the previous generation, and a single wafer can Produce 20% more chips.
Samsung said the reduced power consumption of 16Gb DDR5 DRAM will allow server and data center operators to reduce energy consumption and carbon footprint.
The chip also has a maximum speed of 7.2Gbps, which means it can process 60GB in about a second, meeting the needs of data centers, AI and new computing applications.
The 12nm node was made possible thanks to Samsung’s use of a new high-k material that allows the chip to accurately distinguish differences in data signals.
