Samsung predicts that the competition for V-NAND will continue beyond 1,000 layers. Samsung started with the introduction of 24 layers in 2013 and has grown to more than 200 layers in the last 10 years.

Samsung’s initial V-NAND launch had 128Gb (16GB) of capacity per die, and 3D stacking technology allows for up to 24 die stacks, which means the total capacity of a 24-layer stack will be 384GB.

Source: The Elec

Samsung executives say that V-NAND continues the history of NAND and is one of the few success stories of the country’s technology and ecosystem creation.

Samsung executives said that in order to promote 1,000-layer NAND technology, it is like building a skyscraper, which requires consideration of stability issues such as collapse, bending, and fracture, in addition to challenges such as connecting hole processing, minimizing battery interference, reducing layer height, and expanding storage capacity per layer.

The post Samsung predicts 1000+ layer NAND will be available by 2030 appeared first on TechGoing.

The company’s stock fell nearly 4 percent in early trading.

Micron is the first major chipmaker to sound the alarm about falling demand for personal computers and smartphones since earlier this year due to high inflation.

“In order to significantly improve total inventory . . the supply of DRAM bits will need to be scaled back and the supply of NAND bits will grow significantly below previous forecasts,” the company said.

Micron is reducing DRAM and NAND wafer starts — or the initial process in semiconductor production — by about 20 percent compared with the fourth quarter that ended Sept. 1.

For 2023, Micron expects its DRAM bit supply to show negative year-over-year growth and NAND bit supply to show single-digit percentage growth.

The post Micron expects to reduce memory chip supply in 2023 appeared first on TechGoing.