According to Korean media The Elec report, Samsung storage business executives recently attended the Institute of Electronics Engineers 2023 summer conference and said that V-NAND can be stacked to more than 1000 layers in 2030.
Samsung predicts that the competition for V-NAND will continue beyond 1,000 layers. Samsung started with the introduction of 24 layers in 2013 and has grown to more than 200 layers in the last 10 years.
Samsung’s initial V-NAND launch had 128Gb (16GB) of capacity per die, and 3D stacking technology allows for up to 24 die stacks, which means the total capacity of a 24-layer stack will be 384GB.
Samsung executives say that V-NAND continues the history of NAND and is one of the few success stories of the country’s technology and ecosystem creation.
Samsung executives said that in order to promote 1,000-layer NAND technology, it is like building a skyscraper, which requires consideration of stability issues such as collapse, bending, and fracture, in addition to challenges such as connecting hole processing, minimizing battery interference, reducing layer height, and expanding storage capacity per layer.
