As part of the reduction in capital expenditures, it is reported that Micron will postpone the 1γ nm process DRAM using EUV lithography until 2025, and the NAND node after 232 layers will also be postponed.

Micron’s 1γ manufacturing technology was originally scheduled to launch sometime in 2024, but because Micron has to reduce spending on new equipment in fiscal 2023 and 2024, and reduce DRAM bit shipments, it will have to slow down DRAM in its 1β and 1 gamma manufacturing technology growth rate.

The company’s latest 1β manufacturing node-bit density has increased by 35% and power efficiency has increased by 15%, but this technology still relies on deep ultraviolet (DUV) lithography.

In contrast, Samsung and SK Hynix already use EUV lithography for multiple layers in their 4th generation 10nm class memory technology (1α, 1-alpha) and plan to further enhance their 5th generation 10nm class DRAM use in nodes.

“Given our decision to slow production of 1β (1-Beta) DRAM, we expect our 1γ (1-gamma) technology to be available in 2025,” Micron said. the next NAND node to accommodate the new demand outlook and required supply growth.”

The post Micron delays EUV lithography-based 1γ nm process DRAM technology until 2025 appeared first on TechGoing.

We are focused on delivering a superior user experience to PC users with this SSD,” said Praveen Vaidyanathan, vice president and general manager of Micron’s Customer Storage Division. The new 2550 SSD is built on our established and widely adopted PCIe Gen4 architecture. It also features Micron’s industry-leading 232 layers of NAND and focuses on thermal architecture and power design. These capabilities provide impressive application performance and amazing energy savings.”

Officials say the Micron 2550 SSD transfers files 112 percent faster, runs office productivity applications 67 percent faster, loads mainstream games 57 percent faster and runs content creation applications 78 percent faster than competitive products. It also delivers amazing sequential read performance of up to 5GB bytes per second and sequential write performance of up to 4GB bytes per second, 1.4 and 1.3 times faster than previous generation SSDs, respectively.

Micron’s optimizations for entering and exiting self-starting power-saving states, the use of advanced process nodes for the host, and the elimination of DRAM through host memory buffer (HMB) technology combine to achieve battery sleep power consumption of less than 2.5 milliwatts, active idle power consumption of less than 150 milliwatts, and active power consumption of less than 5.5 watts.

The Micron 2550 SSD is available in 22x80mm, 22x42mm and 22x30mm form factors and in 256GB, 512GB and 1TB capacities, and the price of the product has not yet been announced.

The post Micron begins shipping industry’s first consumer SSD with 232-layer NAND technology appeared first on TechGoing.

According to Micron, 1β technology can improve energy efficiency by about 15%, memory density by more than 35%, and the capacity of a single die up to 16Gb.

The 1-beta process technology enables lower power consumption per bit than ever before, providing smartphones with the most energy-efficient memory technology on the market today. It will enable smartphone manufacturers to introduce longer-lasting devices — extended battery life will be critical when consumers are using power-hungry, data-intensive applications.

The new JEDEC Enhanced Dynamic Voltage and Frequency Regulation Extended Core (eDVFSC) technology make 1β-based LPDDR5X even more energy efficient. The addition of eDVFSC to the dual frequency layer up to 3200 Mbps allows for improved power saving control, resulting in lower power consumption based on a unique end-user model.

Finally, Micron said it will mass produce 1β nodes in other applications such as embedded, data center, client, consumer, industrial and automotive in the coming year, including products such as display memory and high-bandwidth memory.

The Hiroshima plant was acquired by Micron in 2013 when it acquired Elpida, and will build a new plant in 2019, among other things, dedicated to the production of cutting-edge technology products DRAM. The Japanese government announced in September that it would subsidize up to 46.4 billion yen for the Hiroshima plant to enhance its equipment in order to strengthen its semiconductor production base, according to Kyodo News.

The memory maker’s previous generation DRAM chips were differentiated by 1X, 1Y and 1Z processes, with 1Xnm process equivalent to 16-19nm level, 1Ynm equivalent to 14-16nm and 1Znm process equivalent to 12-14nm level. According to industry sources, the latest 1α, 1β and 1γ may be equivalent to 14-12nm, 12-10nm and 10nm respectively.

The post Micron Technology begins mass production of 1-beta DRAM in Hiroshima Japan appeared first on TechGoing.

As part of the bill, President Joe Biden is setting aside $52 billion in funding to encourage chip companies to establish manufacturing sites in the U.S. and recently signed an executive order to get the money to semiconductor companies faster.

Micron’s new manufacturing center will consist of four separate plants on 1,300 acres in Clay, N.Y., just north of Syracuse, according to the New York Times and local media reports in Syracuse. The facility will create about 9,000 jobs over the next 20 years and will also bring 40,000 construction and supply chain jobs to the area. When construction is complete and production begins, Micron will need about 3,000 workers to start up its $20 billion “megafabric. Micron plans to begin construction in 2024 and production in 2025.

Micron also announced plans last month to build a $15 billion semiconductor plant in Idaho and said it would invest $40 billion in memory factories in the U.S. by 2023.” Micron CEO Sanjay Mehrotra said in a statement, “There is no question that without the CHIPS Act, we would not be where we are today.”

In addition to Micron, Intel has benefited from the Biden administration’s legislation, and it has broken ground on a $20 billion chip plant in Ohio. The company has also invested another $20 billion in a manufacturing center in Arizona.

The post Micron invests $100 billion to build the largest semiconductor manufacturing plant in New York appeared first on TechGoing.

“I hope this deal will help further expand cooperation between Japan and the United States in the semiconductor field,” said Japanese Economy and Trade Minister Yasutoshi Nishimura. He said the government approved the deal Friday under a law related to economic security.

Right now, Japan has set up its own fund to support semiconductor production, and Friday’s agreement is its third deal.

Micron is said to be one of the companies that attended the meeting with Harris, along with Tokyo Electron, Nikon, Hitachi High-Technologies Group and Fujitsu Ltd.

The post Japan to provide $320 million in subsidies for U.S. companies chip production appeared first on TechGoing.

Merck said that after a year of continuous cooperation, Micron Technology is currently testing a low GWP alternative etch gas provided by Merck’s R&D department to verify its process performance, thereby replacing traditional high GWP materials and aiming to introduce new and more sustainable gas solutions in the semiconductor process. Both companies are working to identify novel materials that will help achieve sustainability goals by replacing a variety of high warming potential etch gases currently used in dry etch and photomask cleaning processes.

To achieve the goal of reducing carbon emissions from global operations by 42% by 2030 (compared to 2020), Micron Technology is investing in advanced emissions reduction systems, prioritizing the use of lower GWP gases, outsourcing energy-efficient equipment, and replacing energy with renewable petrochemicals, said John Whitman, vice president of Micron Technology.

The post Micron Technology is testing Merck’s low GWP alternative etch gases to validate their process performance appeared first on TechGoing.

According to the report, Micron Technology reported operating income of $8.64 billion, compared to $7.79 billion in the previous quarter and $7.42 billion in the same quarter last year, and the company’s gross margin was 46.7 percent. GAAP net income was $2.63 billion, or $2.34 per diluted share.

Non-GAAP net income was $2.94 billion, or $2.59 per diluted share. Cash flow from operations was $3.84 billion, compared to $3.63 billion in the prior year quarter and $3.56 billion in the same quarter last year.

Micron Technology achieved record revenue in the third quarter, driven by our team’s excellent execution in technology, product and manufacturing,” said Sanjay Mehrotra, president and chief executive officer of Micron Technology.

Recently, the industry demand environment has weakened and we are taking action to slow supply growth. We are confident in the long-term demand for memory and storage and are well positioned to deliver strong cross-cycle financial results.”

The post Micron Technology: $8.64 billion in revenue and 46.7% gross margin in the third quarter appeared first on TechGoing.