Officially, Micron LPDDR5X has a capacity of up to 16 GB, the highest performance and lowest power consumption in the industry.

An introduction to Micron’s 9.6 Gbps LPDDR5X memory as follows:

The new memory has a speed level of up to 9.6 Gbps and a peak bandwidth that is more than 12% higher than the previous generation. It is built on Micron’s industry-leading 1β process node and provides the industry’s most advanced energy-saving features. With the support of dynamic voltage and frequency scaling core technologies, the power consumption is reduced. Reduced by nearly 30%.

“By bringing the power of large language models to flagship phones, generative AI has the potential to unlock unprecedented productivity, ease of use and personalization for smartphone users,” said Mark Montierth, vice president and general manager of Micron’s Mobile Business Unit. Micron’s 1β LPDDR5X, combined with the Qualcomm Snapdragon 8 Gen 3 mobile platform, provides smartphone manufacturers with improved performance and energy efficiency that are critical to enabling revolutionary AI technologies at the edge.”

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SK Hynix 24GB LPDDR5X memory introduction is as follows:

The 24GB LPDDR5X DRAM packaged product operates under the minimum voltage standard range of 1.01~1.12V (volts) specified by the International Organization for Standardization of Semiconductors (JEDEC). The data processing speed is 68GB per second, which is equivalent to transferring 13 Full-HD (FHD) movies per second.

SK Hynix has been mass-producing the new product since last month, supplying it to smartphone maker OPPO, which uses it in its latest flagship smartphone, the OnePlus Ace 2 Pro.

According to the report, the new memory adopts the HKMG process, a next-generation process that employs a high-K gate dielectric on the insulating film inside the DRAM transistor to prevent leakage and improve capacitance, while realizing ultra-low power consumption and high performance. SK Hynix adopted the HKMG process for the first time in the world for mobile DRAMs in November last year, and has successfully mass-produced LPDDR5X DRAMs, which not only increase the speed of memory, but also reduce power consumption.

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▲ Digital blogger @digital chat station broke the news screenshot

According to digital blogger @digital chat station, Realme phones will also be equipped with 24GB LPDDR5X memory. Retention rates are “soaring.”

▲ Mi 13 Ultra memory version

It is noticed that as the volume of phone applications continues to grow, 12GB of memory has gradually become popular in Android flagship phones, and some models have begun to provide 16GB of memory and 512GB of storage space, such as iQOO 11 Pro, OPPO Find X6 Pro, Xiaomi Mi 13 Ultra (up to 1TB storage), etc.

In stark contrast, the memory of Apple’s iPhone 14 series phones equipped with iOS system is only 6GB. According to previous revelations, the iPhone 15 series phones to be released this year are expected to be upgraded to 8GB of running memory, and the memory model is LPDDR5.

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The poster also shows that the OnePlus Ace 2 is powered by a full-blooded version of LPDDR5X memory.

Yesterday, the president of OnePlus China, Jie Li, unveiled real photos of the OnePlus Ace 2, which features a 2.21mm narrow bezel design and a centered perforated dual curved screen.

According to previous information, One Plus Ace 2 will be equipped with a full-blooded version of the first-generation Snapdragon 8+ flagship chip, using the classic One Plus three-stage switch, while equipped with an exclusive self-researched super frame super picture engine, to achieve 100+ games fully 120 fps, will also be the world’s first rhinoceros touch, support Bluetooth 5.3, complementary dual Bluetooth antenna design, Dolby Atmos, spatial audio.

The One Plus Ace 2 will be the world’s first OPPO full-link power management chip SUPERVOOC S. With this chip, One Plus Ace 2 is equipped with a long-life version of 100W flash charging while equipped with a large 5000mAh battery, and optimized for scenarios such as charging while playing.

In terms of communication, OnePlus Ace 2 is equipped with 12 high-performance antennas, LinkBoost 4.0 network technology, optimized for a variety of network scenarios, as well as support for 5G dual SIM dual standby dual pass, Internet access, games and calls without interference, equipped with full-featured NFC.

In terms of imaging, OnePlus Ace 2 is equipped with the same flagship main camera IMX890, supports OIS optical stabilization, uses the same flagship RAW domain lossless computing technology, and is tuned by the same flagship imaging team.

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Previously leaked images showed the Samsung Galaxy S23 series using LPDDR5 memory, which is also used in the Galaxy S21 series and Galaxy S22 series. However, this is not the case. Ice Universe has confirmed that the Samsung Galaxy S23, Galaxy S23+ and Galaxy S23 Ultra will use faster LPDDR5X memory and UFS 4.0 storage.

Here are the Samsung Galaxy S23 series storage configurations.

Galaxy S23: 8GB+128GB, 8GB+256GB

Galaxy S23+: 8GB+256GB, 8GB+512GB

Galaxy S23 Ultra: 8GB+256GB, 12GB+512GB, 12GB+1TB

LPDDR5X memory is the latest low-power memory standard for smartphones, tablets and laptops, supporting data transfer speeds of up to 8533Mbps, 33% faster than the fastest LPDDR5 memory. the UFS 4.0 memory chip offers sequential data read speeds of up to 4200MB/s and sequential write speeds of up to 2800MB/s. write speeds. This is twice the speed of UFS 3.1 memory, which offers sequential read speeds of up to 2100MB/s and sequential write speeds of up to 1200MB/s.

The combination of a new generation chip (Snapdragon 8 Gen 2 For Galaxy), new memory (LPDDR5X) and new storage (UFS 4.0) will bring a huge performance boost to the Samsung Galaxy S23 series, which is expected to be reflected in the phone’s boot speed, app and game launch, multitasking and game running.

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According to reports, Qualcomm is currently testing two models of this processor: SC8380X and SC8380XP. As can be seen from the code name, this processor will be the successor of the Snapdragon 8cx Gen 3 (SC8280). In addition, this processor will support LPDDR5X memory and UFS 4.0 storage and integrate the Snapdragon X65 5G modem.

Qualcomm’s latest PC processor, the Snapdragon 8cx Gen 3, uses four Cortex-X1 cores and four Cortex-A78 cores and is currently installed in notebook products such as Lenovo ThinkPad X13s.

Qualcomm has said that the new Oryon chip is scheduled to provide samples to OEMs in the second half of this year and will be officially commercialized in 2024.

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Micron said that the company’s latest version, LPDDR5X, is designed for high-end and flagship smartphones, and its peak rate is 33% higher than that of the previous generation of LPDDR5. Compared with the 7.5 Gb/s rate achieved last fall, this full-blooded version of LPDDR5X has further improved the rate.

In November last year, Micron sampled and verified phone memory LPDDR5X based on the industry’s first 1α (1-alpha) process node. Prior to this, Micron also introduced LPDDR5, LPDDR4X based on 1α node, UFS 3.1 based on 176-layer NAND and uMCP5 solutions.

Xu Chunli, vice president of the phone department of Xiaomi Group, said that Micron LPDDR5X can effectively improve the user experience of mobile computing photography, local AI translation and other functions. Mi 13 is the first to be equipped with a full-blooded version of LPDDR5X, with a peak speed of 8.5 Gbps.

According to Micron, today’s complex smartphone processors have multiple heterogeneous processing engines built in, and the increased performance levels of LPDDR5X memory are increasingly important for transferring large amounts of data to these heterogeneous engines. As mobile workloads become more complex, advanced silicon platforms require high data rates to ensure seamless multitasking across applications and enable AI inferencing, augmented and virtual reality, immersive image displays, and high-resolution imaging (such as night mode and portrait mode shooting) and other functions.

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In addition to mobile applications, DRAM products based on 1β nodes also feature low latency, low power consumption and high performance, Micron’s next-generation process technology for low-power LPDDR5X mobile memory can reach a maximum rate of 8.5Gb/s. Compared with the previous generation of 1α nodes, 1β technology can improve energy efficiency by about 15% and increase memory density by more than 35%, with a single die capacity of 16Gb.

Compared with the previous generation of 1α node, 1β technology can improve energy efficiency by about 15%, memory density increased by more than 35%, and a single die capacity of 16Gb. Previously, Micron in 2021 volume shipments based on 1α (1-alpha) node products.

According to the introduction, the newly launched LPDDR5X is designed for high-end and flagship smartphones. According to the Taiwanese media, Raj Talluri, senior vice president and general manager of Micron’s Mobile Business Unit, Micron’s highest-speed LPPDR5X is now in mass production and available worldwide.

In addition, Ziad Asghar, vice president of product management at Qualcomm, pointed out that high-speed memory is essential to achieve the light-speed Internet, dynamic experience and epoch-making performance claimed by Snapdragon 8 Gen 2. Micron’s LPDDR5X memory is capable of up to 8.5Gbps, providing unprecedented ultra-high speed and power consumption performance that meets the needs of Qualcomm’s chipsets.

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