According to Taiwan’s United Press, Micron announced that LPDDR5X memory has now been shipped in mass production after being incorporated into the main architecture design of Qualcomm Snapdragon 8 Gen 2 chips.
In addition to mobile applications, DRAM products based on 1β nodes also feature low latency, low power consumption and high performance, Micron’s next-generation process technology for low-power LPDDR5X mobile memory can reach a maximum rate of 8.5Gb/s. Compared with the previous generation of 1α nodes, 1β technology can improve energy efficiency by about 15% and increase memory density by more than 35%, with a single die capacity of 16Gb.
Compared with the previous generation of 1α node, 1β technology can improve energy efficiency by about 15%, memory density increased by more than 35%, and a single die capacity of 16Gb. Previously, Micron in 2021 volume shipments based on 1α (1-alpha) node products.
According to the introduction, the newly launched LPDDR5X is designed for high-end and flagship smartphones. According to the Taiwanese media, Raj Talluri, senior vice president and general manager of Micron’s Mobile Business Unit, Micron’s highest-speed LPPDR5X is now in mass production and available worldwide.
In addition, Ziad Asghar, vice president of product management at Qualcomm, pointed out that high-speed memory is essential to achieve the light-speed Internet, dynamic experience and epoch-making performance claimed by Snapdragon 8 Gen 2. Micron’s LPDDR5X memory is capable of up to 8.5Gbps, providing unprecedented ultra-high speed and power consumption performance that meets the needs of Qualcomm’s chipsets.
