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Micron Announces Mass Production of LPDDR5X into Qualcomm Snapdragon 8 Gen 2 Chip Main Architecture Design

According to Taiwan’s United Press, Micron announced that LPDDR5X memory has now been shipped in mass production after being incorporated into the main architecture design of Qualcomm Snapdragon 8 Gen 2 chips.

In addition to mobile applications, DRAM products based on 1β nodes also feature low latency, low power consumption and high performance, Micron’s next-generation process technology for low-power LPDDR5X mobile memory can reach a maximum rate of 8.5Gb/s. Compared with the previous generation of 1α nodes, 1β technology can improve energy efficiency by about 15% and increase memory density by more than 35%, with a single die capacity of 16Gb.

Compared with the previous generation of 1α node, 1β technology can improve energy efficiency by about 15%, memory density increased by more than 35%, and a single die capacity of 16Gb. Previously, Micron in 2021 volume shipments based on 1α (1-alpha) node products.

According to the introduction, the newly launched LPDDR5X is designed for high-end and flagship smartphones. According to the Taiwanese media, Raj Talluri, senior vice president and general manager of Micron’s Mobile Business Unit, Micron’s highest-speed LPPDR5X is now in mass production and available worldwide.

In addition, Ziad Asghar, vice president of product management at Qualcomm, pointed out that high-speed memory is essential to achieve the light-speed Internet, dynamic experience and epoch-making performance claimed by Snapdragon 8 Gen 2. Micron’s LPDDR5X memory is capable of up to 8.5Gbps, providing unprecedented ultra-high speed and power consumption performance that meets the needs of Qualcomm’s chipsets.

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