In 2018, a 0.35-micron 650V GaN-on-QST process for eight-inch QST baseboards using Qromis baseboard technology (QST TM), was completed in the first quarter of this year and successfully mass-produced in the fourth quarter.

The QST substrate has a better coefficient of thermal expansion (CTE) than the Si substrate and can reduce warpage and breakage while stacking GaN in the process, which is more conducive to mass production. World Advanced’s 0.35-micron 650V GaN-on-QST process can be used in conjunction with the company’s existing eight-inch silicon wafer fabrication equipment in development and production to achieve optimal production efficiency and yields. According to the system validation results from customers, the system efficiency of GaN-on-QST wafers provided by World Advanced has reached the world’s leading level for fast-charging market applications above 65W. In addition, based on the good heat dissipation characteristics of the QST substrate, the GaN wafers provided by World Advanced have better heat dissipation performance in the overall fast-charging solution.

As a leader in special integrated circuit manufacturing services, World Advanced continues to refine its process technology to provide customers with the most efficient and complete solutions and high value-added services,” said Dr. Ji-Shi Yu, Chief Operating Officer of World Advanced. Our 0.35-micron 650V GaN-on-QST process offers performance and reliability advantages that not only provide customers with more optimized IC design options but also help enhance the competitiveness of their products.”

In addition to the 650V component option, World Advanced’s 0.35 micron 650V GaN-on-QST process also offers built-in electrostatic protection (ESD), allowing customers to make more convenient design choices. In addition, the process offers better reliability and reliability and has been working with some customers to meet their product needs for higher voltage (over 1000V) expansion.

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The foundry’s four strongest operating strategy is not only to reduce the impact of the boom cycle, but also to target the next wave of industrial growth momentum under the trend of 5G RF, artificial intelligence (AI), high-speed computing (HPC), and the growth of automotive electronics.

TSMC Chairman Liu Deyin has mentioned that the output value of third-generation semiconductors is on the small side, and the application side is mostly in the automotive field, which is a special technology, although at this stage it is still not comparable to silicon-based semiconductors, but TSMC’s third-generation semiconductor output should still be the largest.

TSMC’s first-generation GaN technology platform on silicon substrates was completed last year and further enhanced to support multiple applications.

In addition, UMC has invested in third-generation semiconductors through its investment in UMC. According to analysis, UMC and TSMC do not have the same strategy for the development of third-generation semiconductors, with TSMC focusing on GaN and power semiconductors, and UMC on power and microwave.

The World Advanced is working with equipment materials and silicon substrate manufacturers to develop new 8-inch substrate materials. World Advanced believes that although compound semiconductors account for only 1% of the overall market value of semiconductors, new materials such as gallium nitride and silicon carbide will provide promising business opportunities.

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