According to Omdia, Samsung’s DRAM revenue in the first quarter was US$4.01 billion, down 61.2% from US$10.35 billion in the same period of the previous year, a quarter-on-quarter decrease up 25.2%.

In the first quarter of this year, SK Hynix’s DRAM market share fell from 27.0% in the previous quarter to 24.7%, a decrease of 2.3 percentage points from the previous quarter, and the industry ranking slipped from second to third. Micron is currently in second place with a 27.2% market share.

Total NAND sales fell by half in the first quarter of 2023, but Samsung’s market share still increased by 0.4 percentage points to 34.3%. The NAND industry is expected to continue to shrink. SK Hynix’s share of the NAND flash memory market was 16.8 percent, falling to No. 4 from No. 3 in the previous quarter.

The opinion of an industry insider: “Although the demand for high-capacity high-performance products such as DDR5 and HBM is recovering due to the demand for AI development, NAND lacks the momentum for demand recovery and customer inventory levels remain low. It is necessary to pass production cuts to protect against lower prices and losses.”

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According to foreign media Chosun Biz, memory manufacturers such as Samsung Electronics and SK Hynix are collaborating with academia to invest in next-generation technologies to reduce power consumption and improve efficiency under high-performance computing.

After inquiry, it is learned that DRAM currently accounts for 40% of the total power consumption of the Nvidia A100-based data center platform, and as the number of layers increases, the power consumption of HBM will also increase.

Seoul National University previously launched DRAM Translation Layer technology, claiming that it can reduce DRAM power consumption by 31.6%, which has attracted Samsung’s interest.

▲ Image source Seoul National University paper

▲ Image source Seoul National University paper

Samsung is currently working with Seoul National University to further reduce memory power consumption. Based on Compute Express Link technology, they have developed a 16GB DDR5 DRAM using a 12nm process, which reduces power consumption by 23% compared to the previous generation.

▲ Source Compute Express Link website

SK Hynix launched LPDDR5X, which applies the High-K Metal Gate (HKMG) process to mobile DRAM. The High-K material has a dielectric constant about five times higher than conventional SiON insulating films, can store five times more charge in the same area and thickness, and helps reduce current leakage. By controlling leakage current, SK Hynix’s LPDDR5X is 33% faster and consumes more than 20% less power than the previous generation.

▲ Picture source Pexels

As the model training task puts forward further technical update requirements for memory manufacturers, manufacturers are now competing with each other, resulting in a certain reduction in memory costs, and consumers can also benefit from it.

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According to the report, Changxin Storage is in the process of selecting underwriters and the size of the IPO has not yet been finalized. A representative from Changxin Storage would not comment on the IPO plans, saying the company is currently focused on R&D work and developing its core business.

Changxin Storage is currently the largest DRAM manufacturer in China, mainly producing DRAM chips, which are used in devices such as personal computers, servers and smartphones. Changxin Storage’s competitors include leading global memory chip manufacturers such as Samsung Electronics, SK Hynix and Micron Technology. Changxin Storage’s IPO will provide it with more capital to expand its production capacity and invest in R&D to close the technology gap with the international giants.

China has been making efforts to develop its local semiconductor industry to reduce its reliance on imported chips. In recent years, China’s need for self-sufficiency in chips has become more pressing due to trade frictions between the US and China and US sanctions against Chinese technology companies such as Huawei, and the listing of Changxin Storage will help boost China’s position and confidence in the storage chip sector.

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The report as follows:

PC DRAM, as the buyer has been three consecutive quarters of large reductions in procurement volume, the current buyer’s PC DRAM inventory of about 9 ~ 13 weeks, while the PC DRAM original factory has carried out production cuts, TrendForce Tibco predicts that the second quarter mainstream DDR4 8GB module will still fall by more than 10%, but perhaps some PC OEMs based on the consideration of the price has been low, there is a willingness to enhance the DRAM However, it remains to be seen whether the high inventory pressure on the supply side can be alleviated, and it is estimated that the average price of PC DRAM will drop by about 10-15% in the second quarter.

As for Server DRAM, OEMs and cloud service providers have lowered server demand, further leading to weak buyer pulling power. However, the uncertainty in the consumer market has caused the original manufacturers to continue to increase the proportion of Server DRAM production, so the inventory accumulated quarter by quarter has become a burden, although the original manufacturers have generally reduced capacity utilization, but the effect of this move on the price to stop the decline is not much, the average price of Server DRAM is estimated to fall 13~18% in Q2.

For Mobile DRAM, although the inventory of smartphone brands has returned to a relatively healthy level, they are still conservative in their production plans, so the buyer’s demand for Mobile DRAM remains weak in Q2. However, the high inventory has put the original manufacturers under great selling pressure. Even though the original manufacturers have reduced the production of Mobile DRAM, it is still difficult to change the current oversupply situation, and it is estimated that the average price of Mobile DRAM will continue to fall in the second quarter, but the decline is expected to converge to 10~15%.

In terms of Graphics DRAM, buyers are conservative in their stocking attitude, and the recent AI issue has not significantly stimulated demand growth. In terms of mainstream GDDR6 16Gb, the average price of Graphics DRAM is expected to drop by 10-15% in the second quarter due to the generally conservative purchasing power. It is worth noting that at this stage, the supply side is in the middle of the 8Gb to 16Gb switch, Samsung will end the GDDR6 8Gb product life cycle at the end of this year, and only SK Hynix will be left to supply from 2024.

In terms of Consumer DRAM, the demand is relatively stable in the Netcom sector, with orders delivered one after another, the industry is gradually slowing down the pulling force, and generally conservative view of the growth of Netcom-related demand this year, including TV applications are unable to effectively support the Consumer DRAM market demand. Although the original manufacturers have been taking production cuts in response, but the market is still oversupplied, prices will continue to fall, it is estimated that the average price of Consumer DRAM in the second quarter will fall 10 ~ 15% from the previous year.

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The picture shows the 4th generation 1α process memory module of SK Hynix

According to reports, the 1-beta process at SK Hynix is roughly equivalent to the 12nm process. The latest 1 beta DRAM is said to be more than 40% more efficient and manufactured using EUV lithography.

In 2021, memory manufacturers will ship 1α process memory. Compared with the previous generation of LPDDR4x products based on the 1z node, the 1α process brings a 40% increase in memory density and a 20% increase in energy efficiency for mobile applications. It is suitable for mobile phone applications that require long battery life, especially when taking photos and videos. Application scenarios of memory.

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They think:

(1) Inventories should return to healthy levels in 2Q23, although key customers are focusing on clearing inventories amid low seasonal demand;

(2) Chip price decline should slow down in 2Q23 as prices approach cost levels (Q4 -30% → Q1 -20% → Q2 -10%);

(3) The earnings decline should end by the first quarter earnings release (April). We believe chip supply-demand dynamics will improve as the signs of the end of the down cycle (e.g. inventory drawdown, slowing price declines) start to emerge in 2Q23.

Samsung Electronics (SEC) announced last week that it will borrow 20 trillion won from Samsung Display (annual interest rate of 4.6%; interest income from Samsung Display is 920 billion won; full amount due in 2025) redemption/ early redemption at discretion) to fund operations.

By the end of 2022, the SEC has 115 trillion won in cash reserves (104 trillion won in net cash), which is inevitable considering its DS division is expected to post its first loss in 14 years. In addition, most of the 53 trillion won capital expenditure planned for this year is for Korean operations.

Considering expected DS losses, Samsung Electronics forecasts OP of KRW 13 trillion in 2023 (down 70% YoY) and KRW 0.6 trillion in 2Q23 (KRW 4.3 trillion in Q4, Q1 1.1 trillion won in the quarter).

Samsung said that the indirect production cut will reduce DRAM production by 9%, resulting in a 4% decline in global DRAM supply, which will help restore the supply-demand balance in the second half of 23. That said, Samsung believes that the supply-demand dynamic will start to rebound in 3Q23.

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ADATA Chairman Chen Li Bai further pointed out that the company’s current outlook on the memory boom remains unchanged and expects memory prices to remain in a short-term correction band this quarter, but thanks to upstream suppliers no longer making profits and a conservative attitude towards chip investment, the price declines for DRAM and NAND Flash are expected to converge compared to the fourth quarter of last year. In the global economic slowdown and consumer demand has not yet recovered, the company will not only strengthen inventory control and product competitiveness this year but also accelerate the shipment of three major high-margin products for industrial control, gaming and electric vehicles, with the goal of improving the company’s overall gross margin. Once the global economy stabilizes in the second half of the year and drives demand to revive, the company will have sufficient momentum to sprint for the next wave of operating peak.

DRAM revenue accounted for 46.84% of ADATA’s revenue in January, while the proportion of SSD products declined slightly to 28.83% and 24.33% for memory cards, portable hard drives and other products.

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The latest reports from research institutions and securities companies show that Samsung Electronics’ foundry business revenue reached US$5.584 billion in the third quarter of this year, higher than the US$4.3 billion sales of the NAND flash memory business. Foreign media reported that this is the first time that the revenue of Samsung Electronics’ wafer foundry business has exceeded that of the NAND flash memory business.

The reason is, on the one hand, the rapid development of Samsung Electronics’ wafer foundry business, which mainly benefits from the increase in demand for customized chips related to artificial intelligence and 5G communications, the improvement of the yield rate of advanced manufacturing processes, and the improvement of the competitiveness of mature manufacturing processes And other factors. On the other hand, the NAND flash memory business suffered setbacks. Due to the decline in demand for personal computers and smartphones, both the demand and price of NAND flash memory fell. Among them, the contract price of NAND flash memory fell by 13.9% compared with the end of last year.

As of the second quarter of this year, Samsung Electronics had a 43.5 percent share of the DRAM chip market, followed by South Korea’s SK Hynix with 27.4 percent and U.S. Micron Technology with about 24.5 percent, according to The Korea Times.

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According to industry sources, Samsung Electronics will increase DRAM equipment at its P3 plant in Pyeongtaek, South Korea. The monthly production capacity of 12-inch wafers can reach 70,000 pieces, and next year it will increase the production capacity of P3 foundry wafers by 30,000 pieces (a total of 100,000 pieces). , which is higher than the monthly production capacity of 20,000 pieces of the current DRAM production line of the P3 factory.

Samsung Electronics plans to use the new equipment to produce 12nm-class DRAM. As of the third quarter of this year, Samsung’s total monthly DRAM wafer production was 665,000 pieces.

According to reports, Samsung Electronics plans to increase the monthly wafer output of the P3 plant by 30,000 wafers. As of the third quarter of this year, Samsung Electronics’ overall monthly foundry output was 476,000 wafers. In addition, Samsung Electronics has also decided to build at least 10 new extreme ultraviolet lithography equipment (EUV) next year, while Samsung currently has only 40.

Image source Unsplash

Samsung currently has five semiconductor factories in South Korea, located in Giheung, Hwaseong, Pyeongtaek, Onyang and Cheonan. In addition, Samsung also operates three chip factories in Suzhou, Tianjin and Xi’an in China, as well as a chip factory in Austin, Texas.

Samsung’s largest semiconductor factory is the P3 factory in Pyeongtaek. The factory began construction at the end of 2020 and took nearly two years to complete. It began to produce cutting-edge NAND flash memory chips in July this year. In the future, it may also produce application processors and other semiconductors.

Samsung’s financial report for the third quarter of 2022 shows that its operating profit was 10.85 trillion won, a year-on-year decrease of 31.4%, and a month-on-month decrease of 23%; its net profit was 9.39 trillion won, a year-on-year decrease of 23.6%.

Samsung’s rivals have scaled back investments due to falling demand and a glut of chips. But Samsung said in October that they would not intentionally cut chip production, contrary to the industry-wide trend of cutting production to meet mid- to long-term demand.

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As part of the reduction in capital expenditures, it is reported that Micron will postpone the 1γ nm process DRAM using EUV lithography until 2025, and the NAND node after 232 layers will also be postponed.

Micron’s 1γ manufacturing technology was originally scheduled to launch sometime in 2024, but because Micron has to reduce spending on new equipment in fiscal 2023 and 2024, and reduce DRAM bit shipments, it will have to slow down DRAM in its 1β and 1 gamma manufacturing technology growth rate.

The company’s latest 1β manufacturing node-bit density has increased by 35% and power efficiency has increased by 15%, but this technology still relies on deep ultraviolet (DUV) lithography.

In contrast, Samsung and SK Hynix already use EUV lithography for multiple layers in their 4th generation 10nm class memory technology (1α, 1-alpha) and plan to further enhance their 5th generation 10nm class DRAM use in nodes.

“Given our decision to slow production of 1β (1-Beta) DRAM, we expect our 1γ (1-gamma) technology to be available in 2025,” Micron said. the next NAND node to accommodate the new demand outlook and required supply growth.”

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