It is learned from SK Hynix’s official announcement that the 8th generation 3D NAND stack has matured to more than 300 layers, has a capacity of 1Tb (128GB), has three-level cells and a bit density of more than 20Gb/mm^2 (bit density).

The chip has a page size of 16KB, 4 planes, an interface transmission speed of 2400MT/s, and a maximum throughput of 194MB/s (18% faster than the 7th generation 238-layer 3D NAND).

Nearly doubling the bit density of the new NAND would mean a significant increase in per-wafer productivity for the new manufacturing node, and would also lower costs for SK Hynix, though it’s not clear how much.

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