SK Hynix recently announced the details of the eighth-generation 3D NAND, with more than 300 stacked layers, and is expected to be on the market by the end of 2024 or early 2025.
It is learned from SK Hynix’s official announcement that the 8th generation 3D NAND stack has matured to more than 300 layers, has a capacity of 1Tb (128GB), has three-level cells and a bit density of more than 20Gb/mm^2 (bit density).
The chip has a page size of 16KB, 4 planes, an interface transmission speed of 2400MT/s, and a maximum throughput of 194MB/s (18% faster than the 7th generation 238-layer 3D NAND).
Nearly doubling the bit density of the new NAND would mean a significant increase in per-wafer productivity for the new manufacturing node, and would also lower costs for SK Hynix, though it’s not clear how much.
