SK Hynix announced that the company has successfully developed the world’s fastest mobile DRAM (memory) “LPDDR5T (Low Power Double Data Rate 5 Turbo)”, and has provided samples to customers.
SK Hynix launched the mobile DRAM LPDDR5X in November last year and has now successfully developed LPDDR5T, which is 13% faster than the existing product and operates at up to 9.6Gbps (Gb/s). The LPDDR5X speed is 8.5Gbps.
LPDDR5T operates at the minimum voltage of 1.01~1.12V (Volt) as specified by the International Organization for Standardization of Semiconductors (JEDEC). This product combines high speed and low power consumption.
SK Hynix said the sample can process data up to 77GB per second, which is equivalent to processing 15 Full-HD movies per second.
SK Hynix plans to use the 4th generation 10nm class (1a) fine process to advance the mass production of this product in the second half of this year.
In addition, SK Hynix also uses the “HKMG (High-K Metal Gate)” process in this product to achieve the best performance, and the company expects the LPDDR5T, which significantly widens the technology gap, to dominate the market before the next generation of LPDDR6 is introduced.
SK Hynix expects LPDDR5T to be used not only in smartphones, but also in artificial intelligence (AI), machine learning, augmented/virtual reality (AR/VR), etc.
Here are some encyclopedia tips
LPDDR (Low Power Double Data Rate): This is a DRAM specification for mobile products such as smartphones and tablets that features low-voltage operation for the purpose of minimizing power consumption. The latest specification is the 7th generation LPDDR (5X), which was developed in the order of 1-2-3-4-4X-5-5X. LPDDR5T is the first product developed by SK Hynix before the 8th generation LPDDR6 was launched. The LPDDR5T is the first product developed by SK Hynix in the industry and is a further upgrade of the performance of the 7th generation LPDDR (5X) before the official launch of the 8th generation LPDDR6.
HKMG (High-K Metal Gate): A next-generation process that uses a high-K gate dielectric on the insulating film inside the DRAM transistor to prevent leakage while improving capacitance. SK Hynix adopted the world’s first HKMG process for mobile DRAM in November last year.
