Home Computers SK Hynix Develops HBM3E Memory with 1.15TB/s Speed for AI Industry

SK Hynix Develops HBM3E Memory with 1.15TB/s Speed for AI Industry

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SK hynix issued a press release today, announcing the successful development of HBM3E, a new ultra-high-performance DRAM product for AI, and began to provide samples to customers for performance verification.


▲ Picture source SK Hynix official website, the same below

Note: HBM (High Bandwidth Memory) refers to the vertical connection of multiple DRAMs, which can significantly increase the data processing speed. HBM DRAM products are HBM (first generation), HBM2 (second generation), HBM2E (third generation ), HBM3 (fourth generation), HBM3E (fifth generation) sequential development. HBM3E is the extended (Extended) version of HBM3.

SK hynix said: “Based on the only mass production experience of HBM3, the company has successfully developed the world’s highest performance extended version HBM3E. And with the industry’s largest HBM supply experience and mass production maturity, it will start investing in the first half of next year. Mass production of the HBM3E cements a unique position in the AI-oriented memory market.”

According to reports, in terms of speed, this product can process up to 1.15TB (terabytes) of data per second. It is equivalent to processing 230 Full-HD (FHD) class movies (5 gigabytes, 5GB) in 1 second.

At the same time, the SK hynix technical team adopted the latest technology of Advanced MR-MUF on this product, and its heat dissipation performance has been improved by 10% compared with the previous generation. HBM3E also has backward compatibility (Backward compatibility), so customers can directly adopt new products in systems based on HBM3 without modifying its design or structure.

Ian Buck, vice president of Hyperscale and HPC at NVIDIA, said: “Nvidia has had a long-standing collaboration with SK hynix for HBM, which is used in state-of-the-art accelerated computing solutions (Accelerated Computing Solutions). AI computing, we look forward to the continued cooperation between the two companies in the field of HBM3E.”

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