SK Hynix announced today that it has officially become the first company in the industry to develop NAND flash memory with more than 300 layers through the release of 321-layer 4D NAND samples.
SK hynix announced that it will further improve 321-layer NAND flash memory and plans to start mass production in the first half of 2025.
SK Hynix 321-layer 1Tb TLC NAND attached is introduced as follows:
The 321-layer 1Tb TLC NAND is 59% more efficient than the previous generation’s 238-layer 512Gb. This is because the units of data storage can be stacked higher with more single-chip quantities, achieving greater storage capacity on the same chip, thereby increasing the output number of chips on a unit wafer.
In addition, SK hynix has launched next-generation NAND product solutions optimized for these needs: Enterprise SSD (eSSD) with PCIe 5 (Gen5) interface and UFS 4.0.
SK hynix also stated that based on the product technology accumulated so far and the continuous optimization of internal solutions in the enterprise, the company is actively developing next-generation PCI 6.0 and UFS 5.0 products in order to continue to lead the market in the future.
