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Samsung’s next-gen 3nm / 4nm nodes expected to be mass-produced in the H2 of next year

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Samsung Electronics revealed to investors this week that it will transition and promote photolithography technology in the near future, and plans to launch the second-generation 3nm process technology (SF3) and the mass production version of 4nm to the market in the second half of 2024. Products of Craft (SF4X).

Source: Samsung Electronics

A statement from the company read:

 We plan to launch mass production of the second-generation 3nm process and the fourth-generation 4nm process for HPC in the second half of this year to further enhance our technological competitiveness.

 The market is expected to shift towards growth due to rebound in mobile demand and continued growth in HPC demand.

Note: Samsung’s upcoming SF3 process technology is a major upgrade to its existing SF3E production node, which according to currently published information is only used to manufacture small chips for cryptocurrency mining.

Samsung claims that SF3 will provide greater design versatility, enabling different nanosheet channel widths for different all-gate (GAA) transistors within the same cell type.

Although Samsung did not directly compare SF3 and SF3E, Samsung said that SF3 has significant improvements over SF4 (4LPP, 4nm level, low power consumption): including 22% performance improvement at the same power and complexity, or at the same frequency and transistor count Power consumption is reduced by 34%, and logic area is reduced by 21%.

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