Samsung Electronics today announced that it has successfully developed its first 16Gb DDR5 DRAM built using 12nm process technology and has completed product evaluation with AMD for compatibility.
▲ Photo from Samsung Electronics, below
The breakthrough was achieved by using a new high-k material to increase cell capacitance and a patented design technique to improve key circuit characteristics, Samsung said.
Samsung data shows that, combined with advanced multi-layer extreme ultraviolet (EUV) lithography technology, the new DRAM has Samsung’s highest Die density (Die density), which can increase wafer productivity by 20%. Based on the latest DDR5 standard, Samsung’s 12nm-class DRAM will unlock speeds of up to 7.2 gigabits per second (Gbps).
In terms of energy efficiency, compared to the previous generation of Samsung DRAM products, the power consumption of 12nm-class DRAM is reduced by about 23%.
With the new DRAM mass production in 2023, Samsung plans to expand this DRAM product based on advanced 12nm-class process technology to a wider market segment.
