Micron issued a press release, further expanding the 1β (1-beta) process node technology and the launch of 16Gb DDR5 memory.
Micron’s demonstrated 1β DDR5 DRAM is now available to data center and PC users and can reach peak speeds of 7200 MT/s.
Featuring advanced high-k CMOS device technology, 4-phase clocking and clock-sync1, this new DDR5 memory delivers a 50% performance improvement over the previous generation and a 33% improvement in performance per watt.
The new 1β DDR5 DRAM product line offers module densities from 4,800 MT/s to 7,200 MT/s to meet the needs of data center and client applications.
Brian Callaway, corporate vice president of Micron’s Core Computing Design Engineering Group, emphasized the importance of this development, stating, “The high-volume production and availability of 1β DDR5 DRAM for client and data center platforms marks a significant milestone for the industry. Our collaboration with ecosystem partners and customers will drive faster adoption of these high-performance memory products.”
Micron’s 1β technology supports a broad portfolio of memory-based solutions, including DDR5 RDIMMs and MCRDIMMs using 16Gb, 24Gb and 32Gb DRAM chips, LPDDR5X, HBM3E and GDDR7 using 16Gb and 24Gb DRAM chips, with the 16Gb DDR5 memory products to be sold through both direct and channel partner Sales.
After industry analyst TechInsights disassembled the iPhone 15 Pro, it found that Micron’s latest ultra-high-density D1β (D1b) LPDDR5 16 Gb DRAM chips were used inside, marking the industry’s first foray into D1β.
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