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ASML: The number of EUV equipment produced this year will exceed 50 units

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According to The Elec, ASML recently pointed out at the “2022 Semiconductor EUV Ecosystem Global Conference” that the number of ASML’s EUV equipment production has increased from 22 in 2019 to 42 in 2021. It is expected that there will be more than 50 units this year, and the number of production units will increase further next year. Initial versions of High-NA EUV equipment will be available late next year, with production models due in late 2024 or early 2025.

ASML

In the third-quarter financial report announcement on October 19, ASML stated: “In the EUV High-NA business, ASML received additional orders for TWINSCAN EXE:5200; all current EUV customers have submitted High-NA orders.” The High-NA EUV device is a device that increases the lens numerical aperture (NA) of the light-gathering capability from 0.33 to 0.55. Process finer semiconductor circuits than existing EUV equipment. Most people in the industry believe that High-NA devices are critical to the 2nm process.

According to etnews reports, Samsung Electronics and SK Hynix ordered the next-generation semiconductor equipment High-NA extreme ultraviolet (EUV) exposure equipment from the lithography giant ASML. Following TSMC and Intel, South Korean semiconductor manufacturers are also preparing to introduce equipment capable of implementing the 2nm process. Competition for state-of-the-art processes is expected to intensify.

High-NA EUV equipment is more expensive than currently used EUV equipment, but it can achieve ultra-fine processes (single patterning) in one go, which can greatly improve productivity. As far as Samsung Electronics is concerned, it is necessary to preemptively secure High-NA EUV equipment for 2nm mass production after 3nm mass production. Existing EUV equipment is estimated to cost 200 billion won (about 1.008 billion yuan) to 300 billion won (about 1.512 billion yuan), while High-NA EUV equipment is estimated to cost 500 billion won (about 2.52 billion CNY).

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