In August this year, Samsung officially released the 990 PRO PCIe 4.0 SSD. according to Samsung’s official introduction, Samsung 990 PRO series products Samsung used the new V-NAND technology and the newly launched self-developed controller, which can provide ultra-high speed in the PCIe 4.0 interface. The SSD delivers sequential read and write speeds of up to 7,450 MB/s and 6,900 MB/s, respectively, and random read and write speeds of up to 1,400K and 1,550K IOPS, respectively. 55% more random read and write performance is achieved with the 990 PRO compared to the 980 PRO.

According to the introduction, Samsung 990 PRO adopts Samsung’s self-developed “PASCAL” master chip, 8nm low-power architecture, and the flash memory is Samsung’s 7th generation V-NAND 3bit MLC particles. The 990 PRO’s operating current is reduced to 2.2A, compared to the 980 PRO’s 2.9A. In terms of efficacy, the 990 PRO’s performance per watt is 50% higher than the 980 PRO.

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According to the article, the Samsung 990 PRO uses Samsung’s self-developed “PASCAL” host chip, 8nm low-power architecture, and Samsung’s 7th generation V-NAND 3bit MLC particles for flash memory. The 990 PRO’s operating current is reduced to 2.2A, compared to the 980 PRO’s 2.9A. In terms of efficacy, the 990 PRO’s performance per watt is 50% higher than the 980 PRO.

In August this year, Samsung officially released the 990 PRO PCIe 4.0 SSD. according to Samsung’s official introduction, the Samsung 990 PRO series of products Samsung used the new V-NAND technology and the newly launched self-developed controller, which can provide ultra-high speed in the PCIe 4.0 interface. The SSDs deliver sequential read and write speeds of up to 7,450 MB/s and 6,900 MB/s respectively, and random read and write speeds of up to 1,400K and 1,550K IOPS respectively. 55% more random read and write performance is achieved with the 990 PRO compared to the 980 PRO.

The post Samsung 990 PRO flagship SSD with PASCAL main control and 8nm low power architecture appeared first on TechGoing.