The memory chip industry is currently in a downturn, and Samsung hopes to further consolidate its leading position in this field by mass-producing 12nm DRAM.

It is learned from a Samsung press release that compared with the previous generation, the power consumption of the new chip has been reduced by 23%, while the wafer productivity has increased by 20%, which means that the chip size is smaller than the previous generation, and a single wafer can Produce 20% more chips.

Samsung said the reduced power consumption of 16Gb DDR5 DRAM will allow server and data center operators to reduce energy consumption and carbon footprint.

The chip also has a maximum speed of 7.2Gbps, which means it can process 60GB in about a second, meeting the needs of data centers, AI and new computing applications.

The 12nm node was made possible thanks to Samsung’s use of a new high-k material that allows the chip to accurately distinguish differences in data signals.

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▲ Photo from Samsung Electronics, below

The breakthrough was achieved by using a new high-k material to increase cell capacitance and a patented design technique to improve key circuit characteristics, Samsung said.

Samsung data shows that, combined with advanced multi-layer extreme ultraviolet (EUV) lithography technology, the new DRAM has Samsung’s highest Die density (Die density), which can increase wafer productivity by 20%. Based on the latest DDR5 standard, Samsung’s 12nm-class DRAM will unlock speeds of up to 7.2 gigabits per second (Gbps).

In terms of energy efficiency, compared to the previous generation of Samsung DRAM products, the power consumption of 12nm-class DRAM is reduced by about 23%.

With the new DRAM mass production in 2023, Samsung plans to expand this DRAM product based on advanced 12nm-class process technology to a wider market segment.

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