According to statistics from TrendForce, the world’s top five memory module manufacturers will account for 90% of overall sales in 2022; the top ten will collectively account for 96% of the global module market’s turnover. Among them, Kingston’s market share reached 78%. Although its revenue fell slightly, it still maintained the first place in the world.

Despite poor end-market demand, Kingston’s revenue declined slightly due to its brand scale and complete product supply chain, with only a 5.3% year-on-year decline, firmly ranking first in market share.

Ramaxel (memory technology), ranked second, has a year-on-year growth of 90.38% in 2022. Although the performance is outstanding, the main reason is that the recession in 2021 is large, resulting in a low base period. If 2021 is excluded, the revenue scale shows a reasonable trend compared with the revenue in previous years.

ADATA mainly supplies consumer products. Although it also actively deployed high-margin products in industrial control, automotive and e-sports categories last year, its proportion is still low at this stage, so it is difficult to withstand the impact of shrinking global demand. Revenue fell by 10.0%, ranking third.

POWEV (Jiahe Jinwei), benefiting from its brands’ achievements in the e-sports market, has experienced rising revenue. Coupled with its diversified channel sales model, the brand’s revenue has grown by 12.7%, ranking fourth.

Although Kimtigo actively developed products in various fields and expanded its global footprint in 2022, it was still unable to cope with the decline in electronic consumption, and its revenue declined, so its ranking rose slightly to fifth.

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First of all, Jegae Jeong, vice president of the technology development department of Samsung’s foundry business division, was appointed as the chief technology officer (CTO) of the division, and his successor was Jahun Koo.

At the same time, the head of the department responsible for the development of DRAM in storage semiconductors was also replaced, and was taken over by Hwang Sang-jun, who was originally the vice president of the strategic marketing department, which was interpreted by the industry as a concern for the development of HBM technology.

Currently, the heads of Samsung’s advanced development, design, and strategic marketing divisions are You Chang-shik, Oh Tae-young, and Yun Ha-ryong, respectively.

In addition, Samsung will establish a new “advanced development team” in the field of device experience (DX) in charge of home appliances and mobile, focusing on future technologies.

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In fact, Samsung management usually only makes mid-year adjustments, and this sudden adjustment of the two divisions may reflect the difficulties the company is currently facing. At present, Samsung Electronics lags behind TSMC in the foundry market, and is gradually being caught up by SK Hynix in terms of memory. In the future, it will face emerging Chinese companies such as Changxin Storage.

Some Korean media said that estimates show that Samsung Electronics’ DRAM production has dropped to the lowest level since the third quarter of 2021. The company has reduced its average monthly DRAM production to 620,000 wafers in July, a year-on-year decrease of more than 12%. Han Dong-hee, a researcher at SK Securities, expects, “Starting from the third quarter, memory inventories will decline across the board.”

Taiwan’s Economic Daily also believes that after a year of memory inventory adjustments, coupled with the gradual emergence of Samsung and other production reduction effects, the legal person expects DRAM to bottom out in the third quarter, and NAND Flash to bottom out in the fourth quarter after a delay of one quarter.

It is reported that Samsung Electronics Semiconductor Division (DS) had an operating loss of 4.58 trillion won in the first quarter alone, and it is expected to record an operating loss of 3 trillion won in the second quarter. deficit.

Samsung Electronics’ foundry market share was 12.4 percent in the first quarter of this year, down 3.4 percentage points from 15.8 percent in the previous quarter, according to market research firm Trend Force.

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According to reports, the global DRAM revenue in the fourth quarter of 2022 was 12.28 billion US dollars, a quarter-on-quarter decrease of 32.5%, which even surpassed the 28.9% decline in the third quarter. The impact of the decline in the average price (ASP) of DRAM products.

Analysts pointed out that since Q3 last year, customers’ purchases have decreased, and DRAM manufacturers’ inventories have accumulated rapidly. Therefore, in order to seize the proportion of shipments in the fourth quarter, they had to fight for price cuts. Among them, server DRAM has the largest decline. Decrease by 23~28%; DDR5 prices extended to 30~35% month-on-month.

In terms of revenue, the revenue of Samsung, SK Hynix, and Micron all declined significantly. In the Q4 price war, Samsung cut prices most aggressively. Therefore, when the demand was declining, shipments did not decrease but increased. Although revenue reached 5.54 billion US dollars, down 25.1% from the previous month, Samsung’s decline was actually the top three. The lowest in the factory.

SK Hynix’s revenue was US$3.40 billion, down 35.2% month-on-month, and its revenue was facing a recession; Micron’s revenue was US$2.83 billion, down 41.2% month-on-month, and its revenue decline was also the largest among the three factories.

Analysts believe that due to the sharp decline in revenue, the operating profit ratio of each factory dropped rapidly in the fourth quarter of last year, and it is expected that the first quarter of 2023 will turn from positive to negative.

In terms of production capacity planning, due to the optimization of the old process production line, the production capacity of Samsung Line15 has declined slightly. The focus of capacity expansion is on the newly completed P3L. A small amount of trial production has begun in the first quarter of this year, which is the main force supporting the expansion of the total production capacity this year. SK Hynix announced a reduction in production in the fourth quarter of last year. The utilization rate in the first quarter of this year was 92%, and it is expected to further decline to 82% in the second quarter. The M16 production line in South Korea is an advanced process, so it maintains the original plan for a small increase in production. Micron has simultaneously reduced production in Japan and Taiwan, with a capacity utilization rate of 84%. The same level will be maintained throughout 2023. The new 1β process has been mass-produced at Micron’s Japan plant, and the Taiwan plant will start production in the middle of this year.

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And in the latest report, the foreign media also disclosed that in the DRAM market, Samsung Electronics’ share has been the world’s first for 30 consecutive years, in the NAND flash market has been the first for 20 consecutive years.

The foreign media also mentioned in the report, in the third quarter of last year, Samsung Electronics in the global DRAM market share of up to 40.6%, in the NAND flash memory market share of up to 31.6%, market share than the second largest manufacturers are higher than 10 percentage points.

However, the foreign media also mentioned in the report, although Samsung Electronics is currently in the global DRAM and NAND flash market share is far ahead, but they also face the challenge of other manufacturers.

The foreign media also mentioned in the report, an industry analyst said that in the field of memory chips, Samsung Electronics is being caught up with the later, while in the foundry business, TSMC is far ahead, Samsung Electronics is facing a huge challenge.

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SK Hynix launched the mobile DRAM LPDDR5X in November last year and has now successfully developed LPDDR5T, which is 13% faster than the existing product and operates at up to 9.6Gbps (Gb/s). The LPDDR5X speed is 8.5Gbps.

LPDDR5T operates at the minimum voltage of 1.01~1.12V (Volt) as specified by the International Organization for Standardization of Semiconductors (JEDEC). This product combines high speed and low power consumption.

SK Hynix said the sample can process data up to 77GB per second, which is equivalent to processing 15 Full-HD movies per second.

SK Hynix plans to use the 4th generation 10nm class (1a) fine process to advance the mass production of this product in the second half of this year.

In addition, SK Hynix also uses the “HKMG (High-K Metal Gate)” process in this product to achieve the best performance, and the company expects the LPDDR5T, which significantly widens the technology gap, to dominate the market before the next generation of LPDDR6 is introduced.

SK Hynix expects LPDDR5T to be used not only in smartphones, but also in artificial intelligence (AI), machine learning, augmented/virtual reality (AR/VR), etc.

Here are some encyclopedia tips
LPDDR (Low Power Double Data Rate): This is a DRAM specification for mobile products such as smartphones and tablets that features low-voltage operation for the purpose of minimizing power consumption. The latest specification is the 7th generation LPDDR (5X), which was developed in the order of 1-2-3-4-4X-5-5X. LPDDR5T is the first product developed by SK Hynix before the 8th generation LPDDR6 was launched. The LPDDR5T is the first product developed by SK Hynix in the industry and is a further upgrade of the performance of the 7th generation LPDDR (5X) before the official launch of the 8th generation LPDDR6.

HKMG (High-K Metal Gate): A next-generation process that uses a high-K gate dielectric on the insulating film inside the DRAM transistor to prevent leakage while improving capacitance. SK Hynix adopted the world’s first HKMG process for mobile DRAM in November last year.

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Although no longer developing DRAM technology, Intel is not completely cut off from storage technology, for example, the company later announced at IDF 2015 to cooperate with Micron to develop 3D XPoint technology, put efforts into the field of NAND Flash, and also developed Optane Aeon hard disk, but in a few years, the related business was sold off.

Intel subsidiary “Intel Federal LLC” accepted the commission of the U.S. Department of Energy to develop a new memory technology for Sandia National Laboratories. According to the report, this technology is part of the U.S. AMT Advanced Memory Technology, mainly used in the field of supercomputing, designed to accelerate simulation and computing applications.

No definitive information is available on this new DRAM technology, but several technologies have been selected and overall appear to be very powerful, up to 40 times more effective than those used in Sandia Labs’ upcoming NNSA supercomputer.

The project is funded by the National Nuclear Security Administration’s Advanced Simulation and Computing Program, in partnership with Sandia, Los Alamos, and Lawrence Livermore national laboratories, and is part of NNSA’s post-trillion sub-computing program portfolio, whose goal is to maintain technology development momentum and improve U.S. industry competitiveness in next-generation high-performance computing technologies through close collaboration with industry initiated by its PathForward program The goal is to maintain technology development momentum and to foster a stronger domestic HPC ecosystem through close collaboration with industry initiated by its PathForward program.

“This work will focus on improving the bandwidth and latency characteristics of future memory systems, which will have a direct impact on application performance across a wide range of ASC task codes,” said James H. Laros III, Sandia project leader.

“We are already anticipating the next generation of future platform challenges that must be addressed,” said Anil Rao, vice president and general manager of Intel’s Systems Architecture and Engineering Group, “and we believe the Advanced Memory Technology Program will help us support the next decade of innovation.”

“We are rethinking the way DRAM is organized and the fundamental aspects of how it can be combined with computing platforms to achieve breakthrough performance,” said Intel Fellow Josh Fryman. “We intend to fundamentally advance computer system architecture by examining the toughest questions posed by scientists at Sandia, Lawrence Livermore and Los Alamos National Laboratory. Mainstream memory is not designed for today’s computing platforms, and this multi-year effort will help us achieve orders of magnitude performance gains from the basic DRAM design itself, leading to entirely new levels of performance across all industry sectors. We expect to see these innovations incorporated into industry standards to enhance the entire ecosystem.”

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