Samsung Electronics disclosed the company’s latest development progress in memory chips and demonstrated Samsung’s ambitions for the density limit of memory chips and the development of breakthrough materials.
Lee Jung-Bae, head of Samsung Electronics’ storage business, said Samsung has produced products based on its ninth-generation V-NAND flash memory products and hopes to achieve mass production early next year. In addition, the company is developing industry-leading 11nm-class DRAM chips.
He said that Samsung is developing 3D stacking structures and new materials for DRAM; for NAND flash memory, Samsung is achieving the smallest cell size in the semiconductor industry by increasing the number of stacking layers while reducing the height.
He mentioned that “new structures and new materials are very important in the upcoming era of sub-10nm DRAM and V-NAND chips with more than 1,000 layers.”
Of course, AI chips are also crucial to Samsung Electronics. The company has now begun production of HBM3 high-performance memory chips. Additionally, it is developing the next generation HBM3E.
Lee Jung-bae said Samsung hopes to produce “customized” HBM chips for customers. “We are focusing on appropriately responding to requirements related to new applications such as hyperscale AI,” “We will continue to advance our memory chip production lines to overcome diverse demands and long memory chip lead times.”
Samsung Electronics will hold the Samsung Memory Technology Day 2023 event in Silicon Valley on October 20. At that time, the Korean chip manufacturer will launch some of the latest memory chip technologies and products.
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