Samsung today announced the use of 12 nanometer (nm) level process technology, the development of its largest capacity of 32Gb DDR5 DRAM, in the same package size, the capacity of the 16Gb memory module is twice.
SangJoon Hwang, Executive Vice President of Memory Development Group, Memory Division, Samsung Electronics, said: Based on Samsung’s newly launched 12nm-class 32Gb memory, Samsung can develop a solution to realize a 1TB memory module, which will help to meet the growing demand for high-capacity DRAM memory in the era of artificial intelligence and big data.
Samsung’s 12nm-grade 32Gb DDR5 DRAM product description is as follows:
By using the newly developed 32Gb memory particles, it is possible to produce 128GB memory modules even without the use of the silicon through hole (TSV) process. This reduces power consumption by approximately 10% compared to a 128GB memory module using a 16 GB memory package. This technological breakthrough makes this product the preferred solution for energy-efficiency-conscious organizations such as data centers.
Based on the 12nm-class 32Gb DDR5 DRAM, Samsung plans to continue to expand its high-capacity memory product lineup to meet the growing needs of high-performance computing. By offering 32Gb of memory in the 12nm class to data centers, as well as to customers adopting applications such as artificial intelligence and next-generation computing, Samsung is looking to solidify its position at the forefront of the next-generation memory market. Going forward, the product will also play a vital role in Samsung’s long-term collaboration with other core industry partners.
Mass production of the new 12nm-class 32Gb DDR5 DRAM is scheduled to begin by the end of this year.
