Micron announced today that LPDDR5X memory production samples using the 1β process have now been shipped, reaching a speed of 9.6 Gbps, and supporting Qualcomm’s latest flagship mobile platform Snapdragon 8 Gen 3.
Officially, Micron LPDDR5X has a capacity of up to 16 GB, the highest performance and lowest power consumption in the industry.
An introduction to Micron’s 9.6 Gbps LPDDR5X memory as follows:
The new memory has a speed level of up to 9.6 Gbps and a peak bandwidth that is more than 12% higher than the previous generation. It is built on Micron’s industry-leading 1β process node and provides the industry’s most advanced energy-saving features. With the support of dynamic voltage and frequency scaling core technologies, the power consumption is reduced. Reduced by nearly 30%.
“By bringing the power of large language models to flagship phones, generative AI has the potential to unlock unprecedented productivity, ease of use and personalization for smartphone users,” said Mark Montierth, vice president and general manager of Micron’s Mobile Business Unit. Micron’s 1β LPDDR5X, combined with the Qualcomm Snapdragon 8 Gen 3 mobile platform, provides smartphone manufacturers with improved performance and energy efficiency that are critical to enabling revolutionary AI technologies at the edge.”
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