SK Hynix’s HBM3E memory ushered in a new competitor – Micron. Micron Technology said the new HBM3E can also reach 1.2 TB / s speed, and has delivered samples to customers such as Nvidia, and it is estimated that orders will be booked next year.
Micron’s HBM3E memory uses an eight-tier layout with 24 GB per stack, and is produced using 1β technology for excellent performance.
Micron said its HBM3E memory will offer the same level of performance as its competitors, but at a lower cost than other competitors. Micron said it will begin commercial shipments next year and is currently seeking certification for these products to meet NVIDIA’s requirements.
HBM (High Bandwidth Memory) is a vertically connected multiple DRAMs that can significantly increase data processing speeds. HBM DRAM products are developed in the order of HBM (first generation), HBM2 (second generation), HBM2E (third generation), HBM3 (fourth generation), and HBM3E (fifth generation). hbm3e is the HBM3E is an extended version of HBM3.
