According to the financial news agency reported, recently, known as the “ultimate power semiconductor”, the use of diamond power control with the development of the semiconductor progress. Japan Saga University professor Jia number professor and precision parts manufacturer Japan Orbray cooperation has developed a power semiconductor made of diamond and to 1 square centimeter 875 megawatts of power operation.
This power semiconductor has the world’s highest output power value among existing diamond semiconductors and is second only to gallium nitride products with approximately 2090 megawatts among all semiconductors. Compared with silicon carbide (SiC) and gallium nitride (GaN) products, which are the next generation of power semiconductors, diamond semiconductors have excellent resistance to high voltages and other properties, and power losses are thought to be reduced to one 50,000th of those of silicon products.
Diamond power semiconductors are also highly resistant to heat and radiation and are expected to become essential building blocks for artificial satellites, etc., by around 2050.
Diamond materials have high carrier mobility, high carrier saturation drift rate, high breakdown field strength and other characteristics, is the ideal material for the manufacture of high-power, high-temperature, high-frequency devices, due to its wide band gap, high thermal conductivity, strong breakdown field, very high charge mobility (CVD diamond electron mobility > 75000px2/V.s), making diamond semiconductor devices can be used in high frequency, high power, high voltage and very harsh radiation. It is known as the “ultimate semiconductor material” because of its ability to operate in very harsh environments such as high frequency, high power, high voltage and strong radiation.
The global annual production of natural diamonds is about 150 million carats, while the production of artificial diamonds is more than 20 billion carats, of which 95% of the production comes from mainland China.