The official “Intel China” public account announced on Friday that Intel has recently begun using extreme ultraviolet lithography (EUV) technology to mass-produce the Intel 4 process node. Officials stated that Intel is advancing the “Five Process Nodes in Four Years” plan with strong execution and will be used in a new generation of leading products.
According to reports, Intel 4 is Intel’s first process node produced using EUV technology, which has “achieved significant improvements” in terms of performance, energy efficiency and transistor density. EUV technology will drive technologies such as AI, advanced mobile networks, autonomous driving and new data Applications with the highest computing power requirements, such as central and cloud applications.
The specific progress of each process is as follows:
Intel 7 and Intel 4 have achieved mass production, and Intel 3 is progressing as planned, targeting mass production by the end of 2023.
The Intel 20A and Intel 18A, which feature RibbonFET all-around gate transistors and PowerVia back-side power supply technology, are also “progressing well” and are targeting 2024.
The Intel Core Ultra processor, codenamed Meteor Lake, was released on December 14 this year and uses the Intel 4 process node.
The Xeon processor Sierra Forest will be available in the first half of next year. It has a highly energy-efficient energy-efficiency core (E-core) and uses the Intel 3 process node.
The Xeon processor Granite Rapids will also be launched in the first half of next year, following the launch of Sierra Forest, and has a high-performance performance core (P-Core).
It was previously reported that Intel introduced the Intel 4 process at the ON Technology Innovation Summit held in September.
Intel said that compared with Intel 7, Intel 4 achieves twice the area shrinkage, brings high-performance logic libraries, and introduces multiple innovations:
EUV lithography technology that simplifies the process
lntel 4 is optimized for high-performance computing applications and supports low-voltage (<0.65V) and high-voltage (>1.1V) operation. Compared to Intel 7, Intel 4's iso power performance is improved by more than 20%.
High-density MIM (metal-insulator-metal) capacitors enable superior power delivery performance
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