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Intel Breaks Ground on $20 Billion Fab, Expected to Debut “2nm” Process

In Intel’s IDM 2.0 strategy launched last year, the $ 20 billion investment in the United States mainland to build two advanced process fabs is a very critical part of the news of a skip a few days ago, because the official U.S. $ 52 billion chip subsidy bill has not been passed, but now the news that Intel has been subsidized, the new factory has already started work.

According to DigiTimes, it has been rumored that Intel out officially purchased the land needed for the new Ohio fab in the United States, an investment amounting to $20 billion.

Although the factory opened, Intel’s fab there are many problems, the U.S. government subsidies will determine the size of the factory after Intel said that due to the government’s $ 52 billion chip bill stalled, they had to postpone or cut the scale of investment in Ohio, and even threatened to go to Europe to build a factory.

According to Intel’s previous information, the two new fabs will be named Fab 52, Fab 62, and revealed for the first time that these factories will be mass-produced 20A process in 2024, which is Intel’s future-oriented CPU process, the first time into the post-nanometer era, the first Emi-level process, where the A stands for Emi.

Although the process details have not been announced, but 20A is equivalent to the Friends’ 2nm process and will also have 2 major black technologies – Ribbon FET and PowerVia.

According to Intel, RibbonFET is Intel’s implementation of Gate All Around transistors, which will be the company’s first new transistor architecture since it was the first to launch FinFET in 2011. The technology speeds up transistor switching while achieving the same drive current as a multi-fin structure, but in a smaller footprint.

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Threza Gabriel
Threza Gabrielhttps://www.techgoing.com
TechGoing is a global tech media to brings you the latest technology stories, including smartphones, electric vehicles, smart home devices, gaming, wearable gadgets, and all tech trending.
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