Chongqing Vanguard has successfully produced the first independently developed, designed and self-completed wafer fabrication and packaging test IGBT device in southwest China, according to Chongqing Daily. The IGBT component has passed the user trial and is expected to achieve mass production within this year. (IGBT, Insulated Gate Bipolar Transistor)
It is reported that Chongqing Vanguard started the research and development of IGBT component project at the beginning of this year, which has the characteristics of lower saturation voltage, small switching loss and strong current short-circuit capability, and can be used for kinetic energy conversion of consumer and industrial appliances.
In the past 12 months of shipments, Chongqing Vanguard has achieved a defective rate of only 3 chips out of every 1 billion.
At present, Chongqing Vanguard has started the listing plan, and has introduced BOE and other industry head enterprises or professional investment institutions as strategic investors. Next, Chongqing Vanguard will further accelerate the design, manufacturing and sales of semiconductor chips and semiconductor chip packaging, and continuously launch innovative products.
Encyclopedic Knowledge
IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a composite of (Bipolar Junction Transistor, BJT) bipolar triode and insulated gate field effect tube (Metal Oxide Semiconductor, MOS) The fully controlled voltage-driven power semiconductor device has the advantages of both high input impedance of the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and low on-state voltage drop of the Giant Transistor (GTR). GTR saturation voltage reduction, high current-carrying density, but the drive current is larger; MOSFET drive power is very small, fast switching speed, but the on-state voltage drop is large, the current-carrying density is small. IGBT combines the advantages of the above two devices, the drive power is small and the saturation voltage reduction. IGBTs are ideal for variable current systems with DC voltages of 600V and above, such as AC motors, inverters, switching power supplies, lighting circuits, traction drives, etc.
IGBT is the core device for energy conversion and transmission, commonly known as the “CPU” of power electronics devices. As a national strategic emerging industry, it is widely used in the fields of rail transportation, smart grid, aerospace, electric vehicles and new energy equipment.
IGBT module is a modular semiconductor product consisting of IGBT (insulated gate bipolar transistor chip) and FWD (continuity diode chip) packaged through a specific electrical circuit bridge; the packaged IGBT module is directly applied to inverter, UPS uninterruptible power supply and other equipment.
IGBT modules have the characteristics of energy saving, easy installation and maintenance, and stable heat dissipation; currently, most of the products sold in the market are such modular products, and the general term IGBT also refers to IGBT modules; with the promotion of the concept of energy saving and environmental protection, such products will become more and more common in the market.
