According to BYD Semiconductor’s official release, the latest launch of the SOT-227 package IGBT / diode series modules.
SOT-227 package between the single tube and module, M4 screw flange base plate mounted on four pinout ports, belongs to the internal insulation package, commonly used to package IGBT, various diodes, MOSFETs, etc..
BYD Semiconductor has identified two development directions for this package: one-cell and diode.
The SOT-227 package IGBT module is one of the development directions of power semiconductor series. Its small size and unique one-cell design make it highly flexible and can be freely matched with circuit topologies, so it has special advantages when applied to topologies with high space requirements or special structural layouts, and also greatly facilitates installation and application.
The product is BYD’s own IGBT chip in a standard package, compatible with the mainstream market size. Optimized DBC layout design to reduce sampling signal interference. Small package size, easy to install. The topology circuit can be freely matched according to customer requirements. Application areas include UPS power supply, inverter, servo, photovoltaic energy storage, etc.
SOT-227 package diode series module is also one of the power semiconductor series development direction, is now widely used in the vehicle OBC (for the vehicle power battery charging power electronics, that is, car charger) system, the follow-up will be to the welder low-voltage charger and other industry direction. Because of its small size, easy to install and other characteristics and is gradually accepted and recognized by the market.
The product is BYD’s own IGBT chip, using the standard package, compatible with the mainstream size of the market. Forward voltage reduction, high efficiency, small package size, easy installation, and free to match topology circuit according to customer requirements. Application areas include OBC, welding machine, induction heating, etc.
BYD Semiconductor will also launch more product models in the future, and is committed to covering the full voltage and current IGBT a unit and diode module products.
IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a composite of (Bipolar Junction Transistor, BJT) bipolar triode and insulated gate field effect tube (Metal Oxide Semiconductor, MOS). It has the advantages of high input impedance of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and low on-state voltage drop of Giant Transistor (GTR). GTR saturation voltage reduction, high current-carrying density, but the drive current is larger; MOSFET drive power is very small, fast switching speed, but the on-state voltage drop is large, the current-carrying density is small. IGBT combines the advantages of the above two devices, the drive power is small and the saturation voltage reduction. IGBTs are ideal for variable current systems with DC voltages of 600V and above, such as AC motors, inverters, switching power supplies, lighting circuits, traction drives, etc.
IGBT is the core device for energy conversion and transmission, commonly known as the “CPU” of power electronics devices. As a national strategic emerging industry, it is widely used in the fields of rail transportation, smart grid, aerospace, electric vehicles and new energy equipment.
IGBT module is a modular semiconductor product consisting of IGBT (insulated gate bipolar transistor chip) and FWD (continuity diode chip) packaged through a specific electrical circuit bridge; the packaged IGBT module is directly applied to inverter, UPS uninterruptible power supply and other equipment.
IGBT modules have the characteristics of energy saving, easy installation and maintenance, and stable heat dissipation; currently, most of the products sold in the market are such modular products, and the general term IGBT also refers to IGBT modules; with the promotion of the concept of energy saving and environmental protection, such products will become more and more common in the market.
