This afternoon, the well-known game anchor PDD publicly apologized on microblogging for previously singing “borrowing five hundred years from the sky again” during the live broadcast, which resulted in a claim of 100,000 yuan by the original author. In this regard, PDD said he and the copyright lawyer’s friendly communication, to obtain the understanding of the lyricist of “borrow five hundred years from the sky again”.
On the last day of June, Samsung announced the official mass production of the 3nm process, this time Samsung was finally ahead of TSMC to take the lead in mass production of a new generation of process and is bending the curve, the latter’s 3nm will only be mass-produced in the second half of this year.
According to Samsung’s official introduction, on the 3nm chip, it abandoned the previous FinFET architecture and adopted the new GAA transistor architecture, which significantly improved the chip’s power performance.
Compared to 5nm, the newly developed 3nm GAE process is able to reduce power consumption by 45%, reduce area by 16%, and improve performance by 23% at the same time.
The second-generation 3nm GAP process can reduce power consumption by 50%, improve performance by 30%, and reduce area by 35% at the same time for better results.
What about further down the line? Samsung also has a plan, after the 3nm GAP process will usher in the 2nm GAP process, also based on nanosheet technology GAA transistors, but the structure is further optimized, from 3 nanosheets to 4, which can improve the drive current, while also optimizing the stacking structure to improve performance and reduce power consumption.
2nm GAP process mass production time is also set, is expected to mass production in 2025, the timing and TSMC power production 2nm process is about the same, and is likely to be technically ahead of the latter, because TSMC’s 2nm process in the transistor density squeeze toothpaste, improve only 10%.